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| (R) SMP100LC-xxx TELECOM EQUIPMENT PROTECTION: TRISILTM FEATURES s s s s s s Bidirectional crowbar protection Voltage range from 8V to 262V Low capacitance from 30 pF to 45pF typ @ 50V Low leakage current : IR = 2 A max Holding current: IH = 150 mA min Repetitive peak pulse current : IPP = 100 A (10/1000s) MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes and power crossing: Analog and digital line cards (xDSL, T1/ E1, ISDN...) Terminals (phone, fax, modem...) and central office equipment s s SMB (JEDEC DO-214AA) SCHEMATIC DIAGRAM DESCRIPTION The SMP100LC-xxx series is a low capacitance transient surge arrestor designed for the protection of high debit rate communication equipment. Its low capacitance avoids any distortion of the signal and is compatible with digital line cards (xDSL, T1/E1, ISDN...). BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet main standards such as UL1950, IEC950 / CSA C22.2 and UL1459. They have UL94 V0 approved resin. SMB package is JEDEC registered (DO-214AA). Trisils are UL497B approved (file: E136224) and comply with the following standards GR-1089 Core, ITU-T-K20/K21, VDE0433, VDE0878, IEC61000-4-5 and FCC part 68. July 2002 - Ed: 8C 1/8 SMP100LC-xxx IN COMPLIANCES WITH THE FOLLOWING STANDARDS STANDARD GR-1089 Core First level GR-1089 Core Second level GR-1089 Core Intra-building ITU-T-K20/K21 ITU-T-K20 (IEC61000-4-2) VDE0433 VDE0878 IEC61000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B Peak Surge Voltage (V) 2500 1000 5000 1500 6000 1500 8000 15000 4000 2000 4000 2000 4000 4000 1500 800 1000 Required Minimum serial Voltage Current peak current resistor to meet Waveform waveform (A) standard ( ) 2/10 s 10/1000 s 2/10 s 2/10 s 10/700 s 1/60 ns 10/700 s 1.2/50 s 10/700 s 1.2/50 s 10/160 s 10/560 s 9/720 s 500 100 500 100 150 37.5 2/10 s 10/1000 s 2/10 s 2/10 s 5/310 s 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 ESD contact discharge ESD air discharge 100 50 100 50 100 100 200 100 25 5/310 s 1/20 s 5/310 s 8/20 s 10/160 s 10/560 s 5/320 s THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to leads Parameter Junction to ambient with recommended footprint Value 100 20 Unit C/W C/W ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VR IR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at VRM Continuous reverse voltage Leakage current at VR Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance 2/8 SMP100LC-xxx ABSOLUTE RATINGS (Tamb = 25C) Symbol Ipp Parameter Repetitive peak pulse current: 10/1000 s 8/20 s 10/560 s 5/310 s 10/160 s 1/20 s 2/10 s IFS ITSM Fail-safe mode : maximum current (note 1) Non repetitive surge peak on-state current (Sinusoidal) 8/20 s t = 20ms t = 16.6ms t = 0.2s t = 2s t = 16.6ms t = 20ms 100 250 120 150 200 250 500 5 55 60 25 12 30 260 - 55 to + 150 150 A Value Unit kA A It TL Tstg Tj It value for fusing Maximum lead temperature for soldering during 10s Storage temperature range Maximum junction temperature As C C C Note 1: in fail safe mode, the device acts as a short circuit. Repetitive peak pulse current tr: rise time (s) tp: pulse duration time (s) ex: Pulse waveform 10/1000s tr = 10s tp = 1000s ELECTRICAL PARAMETERS (Tamb = 25C) Type IRM @ VRM max. A SMP100LC-8 SMP100LC-25 SMP100LC-35 SMP100LC-65 SMP100LC-90 SMP100LC-120 SMP100LC-140 SMP100LC-160 SMP100LC-200 SMP100LC-230 SMP100LC-270 Note 1: Note 2: Note 3: % IPP 100 50 0 tr tp t IR @ VR max. Note 1 A V 8 25 35 65 90 50 120 140 160 200 230 262 Static Dynamic C C IH VBO @ IBO VBO @ IBO min. typ. typ. max. max max. max Note 4 Note 5 Note 6 Note 2 Note 3 V 25 40 55 85 120 155 185 210 265 300 350 Note 4: Note 5: Note 6: V 6 22 32 55 81 mA V 15 35 55 85 125 mA mA 50 (typ) 150 150 150 150 pF NA NA NA 45 40 35 30 30 30 30 30 pF 75 65 55 90 80 75 65 65 60 60 60 2 108 120 144 170 200 230 800 160 190 220 275 320 370 800 150 150 150 150 150 150 IR measured at VR guarantee VBR min VR See functional test circuit 1 See test circuit 2 See funtional holding current test circuit 3 VR = 50V bias, VRMS=1V, F=1MHz VR = 2V bias, VRMS=1V, F=1MHz 3/8 SMP100LC-xxx Fig. 1: Non repetitive surge peak on-state current versus overload duration (Tj initial = 25 C). ITSM(A) 70 60 50 40 30 20 10 0 1E-2 1E-1 t(s) 1E+0 1E+1 1E+2 1E+3 Fig. 2: On-state voltage versus on-state current (typical values) IT(A) 50 F=50Hz Tj=25C 10 VT(V) 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 Fig. 3: Relative variation of holding current versus junction temperature . IH[Tj] / IH[Tj=25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Fig. 4: Relative variation of breakover voltage versus junction temperature. VBO[Tj] / VBO[Tj=25C] 1.08 1.06 1.04 1.02 1.00 0.98 Tj(C) -25 0 25 50 75 100 125 Tj(C) 0.96 -25 0 25 50 75 100 125 Fig. 5: Relative variation of leakage current versus junction temperature (typical values). Fig. 6: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35m, recommended pad layout). Zth(j-a)(CW) 100 IRM[Tj] / IRM[Tj=25C] 2000 1000 VRM > 50V 100 10 10 Tj(C) 1 25 50 75 100 125 VRM < 50V tp(s) 1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 4/8 SMP100LC-xxx Fig. 7: Relative variation of junction capacitance versus reverse voltage applied (typical values). C [VR] / C [VR=2V] 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1 2 5 10 VR(V) 20 50 100 300 Tj=25C F=1MHz VRMS=1V TEST CIRCUIT 1 FOR DYNAMIC IBO AND VBO PARAMETERS 100 V / s, di/dt < 10 A / s, Ipp = 100 A 2 45 66 470 83 0.36 nF 46 H U 10 F KeyTek 'System 2' generator with PN246I module 1 kV / s, di/dt < 10 A / s, Ipp = 10 A 26 H 250 12 47 46 H U 60 F KeyTek 'System 2' generator with PN246I module 5/8 SMP100LC-xxx TEST CIRCUIT 2 FOR IBO and VBO parameters : K ton = 20ms R1 = 140 R2 = 240 220V 50Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE : Pulse test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . TEST CIRCUIT 3 FOR IH PARAMETER R Surge generator VBAT = - 48 V D.U.T This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 s. - The D.U.T. will come back to the off-state within 50 ms max. 6/8 SMP100LC-xxx PACKAGE MECHANICAL DATA SMB (Plastic) E1 DIMENSIONS REF. D Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 A1 A2 b E c A1 E E1 D b C L A2 L FOOT PRINT in millimeters (inches) 2.3 (0.09) 1.52 (0.059) 2.75 (0.108) 1.52 (0.059) 7/8 SMP100LC-xxx ORDER CODE SMP 100 LC - xxx Low Capacitance Trisil Surface Mount Voltage IPP = 100 A Ordering type SMP100LC-8 SMP100LC-25 SMP100LC-35 SMP100LC-65 SMP100LC-90 SMP100LC-120 SMP100LC-140 SMP100LC-160 SMP100LC-200 SMP100LC-230 SMP100LC-270 Marking PL8 L25 L35 L06 L09 L12 L14 L16 L20 L23 L27 Package Weight Base qty Delivery mode SMB 0.11g 2500 Tape & Reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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